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SI7252ADP-T1-GE3
DUAL MOSFET, N-CH/100V/28.7A/POWERPAK SO ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSI7252ADP-T1-GE3
Newark Part No.30AJ7385
Product RangeTrenchFET Series
Technical Datasheet
7,842 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.990 |
| 25+ | $1.710 |
| 100+ | $1.310 |
| 500+ | $1.140 |
| 1000+ | $0.804 |
| 2500+ | $0.756 |
| 5000+ | $0.715 |
| 10000+ | $0.703 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.99
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7252ADP-T1-GE3
Newark Part No.30AJ7385
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id28.7A
Continuous Drain Current Id N Channel28.7A
Continuous Drain Current Id P Channel28.7A
Drain Source On State Resistance N Channel0.0155ohm
Drain Source On State Resistance P Channel0.0155ohm
Transistor Case StylePowerPAK SO
No. of Pins8Pins
Power Dissipation N Channel33.8W
Power Dissipation P Channel33.8W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id
28.7A
Continuous Drain Current Id P Channel
28.7A
Drain Source On State Resistance P Channel
0.0155ohm
No. of Pins
8Pins
Power Dissipation P Channel
33.8W
Product Range
TrenchFET Series
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
28.7A
Drain Source On State Resistance N Channel
0.0155ohm
Transistor Case Style
PowerPAK SO
Power Dissipation N Channel
33.8W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability