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Packaging Options
Available to Order
Manufacturer Standard Lead Time: 35 week(s)
Quantity | Price |
---|---|
50+ | $1.580 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$4,740.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7386DP-T1-E3
Newark Part No.16P3841
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id19A
On Resistance Rds(on)0.0058ohm
Drain Source On State Resistance0.007ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd1.8W
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max2.5V
Power Dissipation1.8W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The SI7386DP-T1-E3 is a TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.
- Reduced total dynamic gate charge (Qg)
- Fast switching
- PWM optimized for high efficiency
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0058ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.8W
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
19A
Drain Source On State Resistance
0.007ohm
Rds(on) Test Voltage
20V
Transistor Case Style
PowerPAK SO
Power Dissipation
1.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate