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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7439DP-T1-E3
Newark Part No.57J5732
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id5.2A
On Resistance Rds(on)0.073ohm
Drain Source On State Resistance0.073ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd1.9W
Gate Source Threshold Voltage Max4V
Transistor Case StylePowerPAK SO
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI7439DP-T1-E3 is a 150VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for active clamp in intermediate DC-to-DC power supply applications.
- Ultra-low ON-resistance
- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- Avalanche tested
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.073ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.9W
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
5.2A
Drain Source On State Resistance
0.073ohm
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
4V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability