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SI7686DP-T1-GE3
Power MOSFET, N Channel, 30 V, 35 A, 0.0095 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 35 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.020 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$3,060.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7686DP-T1-GE3
Newark Part No.26R1934
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id35A
On Resistance Rds(on)0.014ohm
Drain Source On State Resistance0.0095ohm
Transistor MountingSurface Mount
Power Dissipation Pd5W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOIC
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.014ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.0095ohm
Power Dissipation Pd
5W
Gate Source Threshold Voltage Max
3V
Power Dissipation
5W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate