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SI7848BDP-T1-GE3
Power MOSFET, N Channel, 40 V, 47 A, 0.009 ohm, PowerPAK SO, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 35 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $2.030 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$6,090.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7848BDP-T1-GE3
Newark Part No.16P3873
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id47A
On Resistance Rds(on)0.0074ohm
Drain Source On State Resistance0.009ohm
Transistor MountingSurface Mount
Power Dissipation Pd4.2W
Rds(on) Test Voltage20V
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max3V
Power Dissipation4.2W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The SI7848BDP-T1-GE3 is a 40V N-channel TrenchFET® Power MOSFET. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0074ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
47A
Drain Source On State Resistance
0.009ohm
Power Dissipation Pd
4.2W
Transistor Case Style
PowerPAK SO
Power Dissipation
4.2W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate