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Quantity | Price |
---|---|
1+ | $3.030 |
10+ | $2.370 |
25+ | $2.190 |
50+ | $2.020 |
100+ | $1.850 |
250+ | $1.730 |
500+ | $1.620 |
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Multiple: 1
$3.03
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7898DP-T1-GE3
Newark Part No.72R4251
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id3A
On Resistance Rds(on)0.068ohm
Drain Source On State Resistance0.085ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd1.9W
Gate Source Threshold Voltage Max2V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI7898DP-T1-GE3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC power supply primary side switch and industrial motor driver applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- PWM optimized
- Fast switching
- 100% Rg tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
Drain Source On State Resistance
0.085ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
1.9W
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.068ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability