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SI7942DP-T1-E3
Dual MOSFET, N Channel, 100 V, 5.9 A, 0.041 ohm
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 100+ | $1.940 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$5,820.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7942DP-T1-E3
Newark Part No.70AC6515
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel100V
Continuous Drain Current Id3.8A
Drain Source Voltage Vds P Channel-
Drain Source Voltage Vds100V
Continuous Drain Current Id N Channel5.9A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.041ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.8A
Drain Source Voltage Vds
100V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
5.9A
Drain Source On State Resistance N Channel
0.041ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate