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SI9933CDY-T1-GE3.
Dual MOSFET, Dual P Channel, 20 V, 4 A
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15,000 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.274 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$685.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9933CDY-T1-GE3.
Newark Part No.26AC3354
Technical Datasheet
Channel TypeDual P Channel
Continuous Drain Current Id4A
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel5.8mohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
Dual P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
5.8mohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
4A
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate