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SIA456DJ-T1-GE3
Power MOSFET, N Channel, 200 V, 2.6 A, 1.38 ohm, SC-70, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.378 |
| 6000+ | $0.376 |
| 12000+ | $0.362 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,134.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA456DJ-T1-GE3
Newark Part No.85W0170
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id2.6A
Drain Source On State Resistance1.38ohm
On Resistance Rds(on)3.5ohm
Transistor MountingSurface Mount
Power Dissipation Pd3.5W
Rds(on) Test Voltage16V
Transistor Case StyleSC-70
Gate Source Threshold Voltage Max1.4V
Power Dissipation3.5W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
1.38ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
16V
Gate Source Threshold Voltage Max
1.4V
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
2.6A
On Resistance Rds(on)
3.5ohm
Power Dissipation Pd
3.5W
Transistor Case Style
SC-70
Power Dissipation
3.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate