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SIDR140DP-T1-RE3
MOSFET, N-CH, 25V, 100A, POWERPAK SO ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIDR140DP-T1-RE3
Newark Part No.77AH0212
Product RangeTrenchFET Gen IV
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.960 |
| 10+ | $2.670 |
| 25+ | $2.410 |
| 50+ | $2.170 |
| 100+ | $1.920 |
| 250+ | $1.810 |
| 500+ | $1.690 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.96
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIDR140DP-T1-RE3
Newark Part No.77AH0212
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id100A
On Resistance Rds(on)540µohm
Drain Source On State Resistance670µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation Pd125W
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
On Resistance Rds(on)
540µohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation Pd
125W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
670µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability