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SIDR402DP-T1-GE3
MOSFET, N-CH, 40V, 100A, 150DEG C, 125W
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ManufacturerVISHAY
Manufacturer Part NoSIDR402DP-T1-GE3
Newark Part No.78AC6501
Product RangeTrenchFET Gen IV
Technical Datasheet
Packaging Options
9,179 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $3.550 |
| 25+ | $3.120 |
| 100+ | $2.640 |
| 500+ | $2.500 |
| 1000+ | $1.860 |
| 2500+ | $1.850 |
| 5000+ | $1.840 |
| 10000+ | $1.820 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.55
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIDR402DP-T1-GE3
Newark Part No.78AC6501
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id100A
On Resistance Rds(on)730µohm
Drain Source On State Resistance880µohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation125W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
730µohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
2.3V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
880µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability