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SIHB12N65E-GE3
MOSFET Transistor, N Channel, 12 A, 650 V, 0.33 ohm, 10 V RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 11 week(s)
| Quantity | Price |
|---|---|
| 1+ | $4.050 |
| 10+ | $2.290 |
| 25+ | $2.260 |
| 50+ | $2.250 |
| 100+ | $2.250 |
| 500+ | $2.150 |
| 1000+ | $2.040 |
| 2500+ | $1.970 |
Price for:Each
Minimum: 1
Multiple: 1
$4.05
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB12N65E-GE3
Newark Part No.40X8669
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id12A
On Resistance Rds(on)0.33ohm
Drain Source On State Resistance0.38ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation156W
Power Dissipation Pd156W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.33ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
156W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.38ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
-
Power Dissipation Pd
156W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability