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| Quantity | Price |
|---|---|
| 1+ | $8.040 |
| 10+ | $7.050 |
| 25+ | $6.720 |
| 50+ | $6.380 |
| 100+ | $6.050 |
| 500+ | $5.590 |
| 1000+ | $4.970 |
Price for:Each
Minimum: 1
Multiple: 1
$8.04
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB24N65EF-GE3
Newark Part No.26AK5790
Product RangeE Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id24A
Drain Source On State Resistance0.13ohm
On Resistance Rds(on)0.13ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation250W
Power Dissipation Pd250W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE Series
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.13ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
250W
No. of Pins
3Pins
Product Range
E Series
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
On Resistance Rds(on)
0.13ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
250W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability