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Quantity | Price |
---|---|
1+ | $2.370 |
10+ | $2.080 |
25+ | $1.460 |
50+ | $1.420 |
100+ | $1.380 |
500+ | $1.170 |
1000+ | $1.150 |
2500+ | $1.100 |
Price for:Each
Minimum: 1
Multiple: 1
$2.37
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHB5N80AE-GE3
Newark Part No.57AJ5698
Product RangeE
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4.4A
On Resistance Rds(on)1.17ohm
Drain Source On State Resistance1.17ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation62.5W
Power Dissipation Pd62.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
1.17ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
62.5W
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
4.4A
Drain Source On State Resistance
1.17ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
62.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability