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Quantity | Price |
---|---|
1+ | $2.130 |
10+ | $1.810 |
25+ | $1.190 |
50+ | $1.130 |
100+ | $1.070 |
500+ | $0.985 |
1000+ | $0.891 |
Price for:Each
Minimum: 1
Multiple: 1
$2.13
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHD6N80AE-GE3
Newark Part No.42AH1972
Product RangeE
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id5A
Drain Source On State Resistance0.826ohm
On Resistance Rds(on)0.826ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd62.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation62.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.826ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
62.5W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
E
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
5A
On Resistance Rds(on)
0.826ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
62.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability