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| Quantity | Price |
|---|---|
| 1+ | $18.110 |
| 10+ | $16.360 |
| 25+ | $14.610 |
| 50+ | $13.910 |
| 100+ | $13.210 |
| 250+ | $12.680 |
| 500+ | $12.530 |
Price for:Each
Minimum: 1
Multiple: 1
$18.11
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHG80N60E-GE3
Newark Part No.75AH9195
Product RangeE
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id80A
Drain Source On State Resistance0.026ohm
On Resistance Rds(on)0.026ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd520W
Power Dissipation520W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.026ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
10V
Power Dissipation Pd
520W
No. of Pins
3Pins
Product Range
E
SVHC
Lead (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
On Resistance Rds(on)
0.026ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation
520W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability