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| Quantity | Price |
|---|---|
| 1+ | $7.110 |
| 10+ | $6.570 |
| 50+ | $6.130 |
| 100+ | $5.840 |
| 500+ | $4.590 |
| 1000+ | $4.560 |
| 2500+ | $4.540 |
| 5000+ | $4.490 |
Price for:Each
Minimum: 1
Multiple: 1
$7.11
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHP28N65E-GE3
Newark Part No.26AK5809
Product RangeE Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id29A
On Resistance Rds(on)0.097ohm
Drain Source On State Resistance0.097ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation250W
Power Dissipation Pd250W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeE Series
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.097ohm
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
250W
No. of Pins
3Pins
Product Range
E Series
SVHC
Lead (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
29A
Drain Source On State Resistance
0.097ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
250W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability