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SIR882ADP-T1-GE3
Power MOSFET, N Channel, 100 V, 60 A, 0.0087 ohm, PowerPAK SO, Surface Mount
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Packaging Options
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $2.970 |
| 10+ | $2.080 |
| 25+ | $1.910 |
| 50+ | $1.750 |
| 100+ | $1.570 |
| 250+ | $1.460 |
| 500+ | $1.340 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.97
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR882ADP-T1-GE3
Newark Part No.19X1954
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id60A
Drain Source On State Resistance8700µohm
On Resistance Rds(on)0.0072ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd83W
Gate Source Threshold Voltage Max1.2V
Power Dissipation83W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
8700µohm
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0072ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
83W
Power Dissipation
83W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate