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SISS32ADN-T1-GE3
MOSFET, N-CH, 80V, 63A, POWERPAK 1212-8S ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS32ADN-T1-GE3
Newark Part No.81AH9259
Product RangeTrenchFET Gen IV
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 32 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.600 |
| 10+ | $1.340 |
| 25+ | $1.290 |
| 50+ | $1.250 |
| 100+ | $1.200 |
| 250+ | $1.160 |
| 500+ | $1.130 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.60
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS32ADN-T1-GE3
Newark Part No.81AH9259
Product RangeTrenchFET Gen IV
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id63A
On Resistance Rds(on)0.0061ohm
Drain Source On State Resistance7300µohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.6V
Power Dissipation Pd65.7W
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0061ohm
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation Pd
65.7W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel
Continuous Drain Current Id
63A
Drain Source On State Resistance
7300µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.6V
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability