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ManufacturerVISHAY
Manufacturer Part NoSIZ328DT-T1-GE3
Newark Part No.56AC6582
Product RangeTrenchFET Gen IV Series
Technical Datasheet
No Longer Available
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ328DT-T1-GE3
Newark Part No.56AC6582
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds25V
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds P Channel25V
Continuous Drain Current Id30A
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Drain Source On State Resistance N Channel0.008ohm
Drain Source On State Resistance P Channel0.008ohm
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation N Channel16.2W
Power Dissipation P Channel16.2W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
MSLMSL 1 - Unlimited
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id
30A
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance P Channel
0.008ohm
No. of Pins
8Pins
Power Dissipation P Channel
16.2W
Product Range
TrenchFET Gen IV Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
30A
Drain Source On State Resistance N Channel
0.008ohm
Transistor Case Style
PowerPAIR
Power Dissipation N Channel
16.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability