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SQJ138ELP-T1_GE3
MOSFET, N-CH, 40V, 315A, POWERPAK SO-8L ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJ138ELP-T1_GE3
Newark Part No.57AJ0706
Product RangeTrenchFET Gen IV
Technical Datasheet
126 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.070 |
| 10+ | $1.650 |
| 25+ | $1.500 |
| 50+ | $1.350 |
| 100+ | $1.200 |
| 250+ | $1.090 |
| 500+ | $0.992 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.07
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ138ELP-T1_GE3
Newark Part No.57AJ0706
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id315A
On Resistance Rds(on)0.0012ohm
Drain Source On State Resistance1500µohm
Transistor Case StylePowerPAK SO-8L
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation Pd500W
Power Dissipation500W
No. of Pins4Pins
Operating Temperature Max175°C
Product RangeTrenchFET Gen IV
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0012ohm
Transistor Case Style
PowerPAK SO-8L
Rds(on) Test Voltage
10V
Power Dissipation Pd
500W
No. of Pins
4Pins
Product Range
TrenchFET Gen IV
Automotive Qualification Standard
AEC-Q101
SVHC
Lead (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
315A
Drain Source On State Resistance
1500µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
Power Dissipation
500W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability