Print Page
VS-3C08ED07T-M3/I
Silicon Carbide Schottky Diode, eSMP Series, Single, 650 V, 8 A, 22 nC, SMPD
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoVS-3C08ED07T-M3/I
Newark Part No.11AM8562
Product RangeeSMP Series
Your Part Number
22 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 6pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $3.460 |
| 10+ | $2.410 |
| 25+ | $2.290 |
| 50+ | $2.180 |
| 100+ | $2.060 |
| 250+ | $1.980 |
| 500+ | $1.800 |
| 1000+ | $1.440 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$17.30
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoVS-3C08ED07T-M3/I
Newark Part No.11AM8562
Product RangeeSMP Series
Technical Datasheet
Product RangeeSMP Series
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current8A
Total Capacitive Charge22nC
Diode Case StyleSMPD
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
VS-3C08ED07T-M3/I is a 650V, 8A Gen 3 power SiC merged PIN Schottky diode. This wide band gap SiC based 650V Schottky diode, designed for high performance and ruggedness. It is an optimum choice for high speed hard switching and efficient operation over a wide temperature range, it is also recommended for all applications suffering from Silicon ultrafast recovery behavior. Typical applications include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters.
- Creepage and clearance distance of 3.6mm (0.14") minimum
- Very low profile – typical height of 1.7mm
- Majority carrier diode using Schottky technology on SiC wide band gap material
- Improved VF and efficiency by thin wafer technology
- Positive VF temperature coefficient for easy paralleling
- Virtually no recovery tail and no switching losses
- Temperature invariant switching behavior
- 175°C maximum operating junction temperature
- Meets JESD 201 class 2 whisker test
- MPS structure for high ruggedness to forward current surge events
Technical Specifications
Product Range
eSMP Series
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
22nC
No. of Pins
2 Pin
Diode Mounting
Surface Mount
SVHC
No SVHC (27-Jun-2024)
Diode Configuration
Single
Average Forward Current
8A
Diode Case Style
SMPD
Operating Temperature Max
175°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate