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VSMB3940X01-GS08
Infrared Emitter, High Speed, 940 nm, 60 °, LCC, 13 mW/Sr, 15 ns, 15 ns
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| Quantity | Price |
|---|---|
| 1+ | $0.806 |
| 10+ | $0.558 |
| 25+ | $0.508 |
| 50+ | $0.457 |
| 100+ | $0.407 |
| 250+ | $0.375 |
| 500+ | $0.341 |
| 1000+ | $0.301 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoVSMB3940X01-GS08
Newark Part No.78R5354
Technical Datasheet
Peak Wavelength940nm
Angle of Half Intensity60°
Diode Case StyleLCC
Radiant Intensity (Ie)13mW/Sr
Rise Time15ns
Fall Time tf15ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.35V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification StandardAEC-Q100
Product Range-
MSL-
SVHCNo SVHC (07-Nov-2024)
Product Overview
The VSMB3940X01-GS08 is a 940nm Infrared Emitting Diode in GaAlAs double hetero (DH) technology. It is moulded in a PLCC-2 package for surface mounting (SMD). It is suitable for use in IrDA compatible data transmission, miniature light barrier, photointerrupters, optical switch, control and drive circuits and shaft encoders.
- High speed
- High reliability
- High radiant power
- High radiant intensity
- ϕ = ±60° Angle of half sensitivity
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- 24MHz High modulation bandwidth (fc)
Technical Specifications
Peak Wavelength
940nm
Diode Case Style
LCC
Rise Time
15ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
AEC-Q100
MSL
-
Angle of Half Intensity
60°
Radiant Intensity (Ie)
13mW/Sr
Fall Time tf
15ns
Forward Voltage VF Max
1.35V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability