Chargers & adapters with high power density Build on Infineon's 20+ years of expertise in this field
Charge fast, carry light! While keeping the carbon footprint low!
Rising demand for chargers with a smaller form factor and ever-increasing power requirements are the current trends seen in the charger & adapter market.
Keep up with the industry’s pace by avoiding complexity as well as incompatibility, and by shortening your time to market! With a broad portfolio of high-performing and high-quality USB-C PD solutions at competitive cost from Infineon you will stay ahead of other market players with your fast charging designs.
Power management optimization across multiple peripherals
The lack of unification and standardization in the charger & adapter equipment domain led to a situation that each device required its very specific bulky charger and cable. Highly inconvenient for end-users. To solve this, the USB-C power delivery (USB-PD) technology, standard for fast charging and data transfer, gained significant importance.
With the primary ambition of simplifying the end-user experience,USB-C PD chargers promise a compact-sized charging solution with higher power, making charging faster and more efficient. However, this convenience comes at the cost of increased engineering efforts.
Higher efficiency, smaller footprint with the same output power, or more power in the same footprint are among the key challenges in contemporary charger designs.
Read the white paper to get an overview of different USB-C PD charging solutions. Each of them can help engineers meet their specific design targets such as maximum efficiency, improved cost-performance, or enhanced design flexibility.
XDPTM digital power XDPS2201 – hybrid flyback controller
The XDPTM XDPS2201 is a digital controller based on an asymmetric half-bridge flyback topology. It combines the simplicity of a traditional flyback with the performance of a resonant converter. Such a combination allows natural soft-switching to reduce switching losses enabling high switching frequency designs. Furthermore, the XDPS2201 comes with an integrated high-side driver saving up to 20 external components. Benefit from reduced BOM and lower cost.
XDPS2201 based 65 W ultra-high power density charger
This USB-PD type-C charger demo board demonstrates high power density and high efficiency with both fixed and PPS output in an ultra-compact form factor supporting up to 65 W. XDPS2201 in combination with Infineon’s renowned CoolMOSTM as well as OptiMOSTM power MOSFET technologies impresses with an outstanding performance and an uncased power density of 31 W/in3.
600 V CoolMOSTM PFD7 – Challenges known MOSFET efficiency and density levels
Comparing the newly launched CoolMOSTM PFD7 with its existing CoolMOSTM P7 technology, Infineon highlights an efficiency increase of up to 1.17%. The mentioned efficiency increase at peak-power results in a rise in power density of up to 1.8 W/in³! At the same power level, PFD7 enables a 5°C lower case temperature. Additionally, the 600 V CoolMOSTM PFD7 features >20% Eoss reduction compared to CoolMOSTM P7 at partial ZVS turn-on voltages. Optimized switching technology parameters militate in favor of the newly released MOSFET family, too. CoolMOSTM PFD7 pushes the SJ MOSFET technology to new limits! Customers will benefit from an outstanding reduction of conduction, charge/discharge, turn-off, and gate-driving losses. Furthermore, an integrated ESD protection of up to 2kV eliminates ESD related yield loss.
The 700 V CoolMOSTM P7 offers a price competitive solution for consumer applications such as chargers and adapters in the power range from 10 W to 75 W. In other words, this product addresses the low-power SMPS market where it tackles common barriers through excellent performance and ease-of-use. The named power converters are typically based on flyback topologies. That is why the 700 V CoolMOSTM P7 is no longer a multi-purpose MOSFET, it is now a tailored technology optimized for flyback topologies. The 700 V CoolMOSTM P7 is available in the cost-effective SOT-223 package, the perfect drop-in replacement as it fits to common DPAK properties (i.e. smaller footprint while DPAK pin-to-pin compatible) and reduces the overall bill of material (BOM). Improved form factors enable space savings without a significant disadvantage in thermals. The CoolMOSTM P7 in SOT-223 is Infineon’s contribution to the design of competitive products that match the increasing demand for compact, light and slim low power SMPS designs
Silicon technologies like CoolMOSTM have reached such an advanced stage of fast and efficient switching that the traditional through-hole packages more and more have become the limiting factor in getting to the next level of energy efficiency and power density. Designers need to balance the power handling capability and package size when selecting high-voltage MOSFETs for a dense charger design. Infineon’s engineers recommend turning to ThinPAK 8x8 - a leadless SMD package for HV MOSFETs - as ideal solution. It has a remarkably small footprint of only 64 mm² (vs. 150 mm² for the D2PAK) and a very low profile with only 1 mm height (vs. 4.4 mm for the D2PAK). These differentiating measurements in combination with benchmark low parasitic inductances, provide designers with a new and effective way to decrease system solution size in power density driven designs.
OptiMOSTM PD (Power Delivery) – Low- and medium-voltage MOSFET portfolio for charger and adapter designs (25 V – 150 V)
OptiMOSTM PD is Infineon‘s new power MOSFET portfolio representing the best fit for USB-PD and fast charger designs, supporting short lead times as well as fast quote response times. The logic level OptiMOSTM PD power MOSFETs in PQFN 3.3 x 3.3 and in SuperSO8 packages have been optimized for synchronous rectification in charger and adapter SMPS applications. Hence, they are highly suitable for addressing the requirements of USB PD charger and adapter designs. Small package sizes translate into shrunk form factors. Lower charges for reduced switching losses and an excellent price/performance ratio lead to system BOM cost improvements. The logic level drive provides a low gate threshold voltage (VGS(th)) allowing the MOSFETs to be driven from 4.5 V or directly from microcontrollers leading to a lower part count in the application. Low reverse-recovery charge (Qrr) and output charge (Qoss) yield low overshoot in synchronous rectification.