Print Page
GAN041-650WSBQ
GAN TRANSISTOR, 650V, 47.2A, TO-247
Image is for illustrative purposes only. Please refer to product description.
180 In Stock
Need more?
18 Delivery in 1-3 Business Days(US stock)
162 Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST Standard Shipping
| Quantity | Price |
|---|---|
| 1+ | $23.500 |
| 10+ | $21.000 |
| 25+ | $18.850 |
| 50+ | $16.700 |
| 100+ | $14.560 |
| 250+ | $12.420 |
| 600+ | $10.270 |
Price for:Each
Minimum: 1
Multiple: 1
$23.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoGAN041-650WSBQ
Newark Part No.45AJ4080
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id47.2A
Drain Source On State Resistance0.041ohm
On Resistance Rds(on) Max0.041ohm
Typical Gate Charge22nC
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins3Pins
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
GAN041-650WSBQ is a 650V, 35mohm Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. The applications include hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, and UPS inverters, and servo motor drives.
- Ultra-low reverse recovery charge, simple gate drive (0V to +10V or 12V), robust gate oxide (±20V)
- High gate threshold voltage (+4V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode, transient over-voltage capability (800V)
- Drain-source voltage is 650V max (55°C ≤ Tj ≤ 175°C)
- Drain current is 47.2A max (VGS = 10V; Tmb = 25°C), total power dissipation is 187W max (Tmb = 25°C)
- Drain-source on-state resistance is 35mohm typ (VGS = 10V; ID = 32A; Tj = 25°C)
- Gate-drain charge is 6.6nC typ (ID = 32A; VDS = 400V; VGS = 10V; Tj = 25°C)
- Total gate charge is 22nC typ (ID = 32A; VDS = 400V; VGS = 10V; Tj = 25°C)
- Recovered charge is 150nC typ (IS = 32A; dIS/dt = -1000A/µs; VGS = 0V; VDS = 400V)
- 3 leads SOT429 package, junction temperature range from -55 to 175°C
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.041ohm
Typical Gate Charge
22nC
Transistor Mounting
Through Hole
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Continuous Drain Current Id
47.2A
On Resistance Rds(on) Max
0.041ohm
Transistor Case Style
TO-247
No. of Pins
3Pins
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate