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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN420N10T
Newark Part No.71AH4551
Product RangeGigaMOS HiperFET Series
Technical Datasheet
315 In Stock
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255 Delivery in 2-4 Business Days(UK stock)
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Quantity | Price |
---|---|
1+ | $34.650 |
5+ | $30.090 |
10+ | $26.560 |
30+ | $25.660 |
50+ | $24.850 |
100+ | $24.360 |
Price for:Each
Minimum: 1
Multiple: 1
$34.65
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN420N10T
Newark Part No.71AH4551
Product RangeGigaMOS HiperFET Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id420A
Drain Source Voltage Vds100V
On Resistance Rds(on)0.0023ohm
Drain Source On State Resistance0.0023ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd1.07kW
Power Dissipation1.07kW
Operating Temperature Max175°C
Product RangeGigaMOS HiperFET Series
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
420A
On Resistance Rds(on)
0.0023ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
1.07kW
Operating Temperature Max
175°C
SVHC
To Be Advised
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0023ohm
Gate Source Threshold Voltage Max
5V
Power Dissipation
1.07kW
Product Range
GigaMOS HiperFET Series
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate