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Quantity | Price |
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25+ | $0.996 |
50+ | $0.864 |
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250+ | $0.697 |
500+ | $0.664 |
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPSMN7R0-60YS,115
Newark Part No.13T9554
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id89A
Drain Source On State Resistance0.00495ohm
On Resistance Rds(on)0.00495ohm
Transistor Case StyleSOT-669
Transistor MountingSurface Mount
Power Dissipation Pd117W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation117W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The PSMN7R0-60YS is a N-channel standard level MOSFET with advanced TrenchMOS technology provides low RDS (ON) and low gate charge. It is designed and qualified for use in a wide range of DC-to-DC convertor, lithium-ion battery protection, load switching, server power supplies and domestic equipment applications.
- Improved mechanical and thermal characteristics
- High efficiency gains in switching power converters
- LFPAK provides maximum power density in a power SO8 package
- -55 to 175°C Junction temperature range
Applications
Power Management, Communications & Networking, Consumer Electronics, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
89A
On Resistance Rds(on)
0.00495ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
117W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.00495ohm
Transistor Case Style
SOT-669
Power Dissipation Pd
117W
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability