Print Page
2N7002-7-F
Power MOSFET, N Channel, 60 V, 210 mA, 13.5 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
271,576 In Stock
Need more?
44411 Delivery in 1-3 Business Days(US stock)
227165 Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST Standard Shipping
| Quantity | Price |
|---|---|
| 1+ | $0.172 |
| 10+ | $0.100 |
| 25+ | $0.084 |
| 50+ | $0.067 |
| 100+ | $0.051 |
| 250+ | $0.051 |
| 500+ | $0.050 |
| 1000+ | $0.041 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.17
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part No2N7002-7-F
Newark Part No.25R5679
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id210mA
Drain Source On State Resistance13.5ohm
On Resistance Rds(on)13.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd300mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation370mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. The case is made of molded plastic, "Green" molding compound (UL94V-0).
- Low on-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Halogen and antimony-free
- Green device
- Qualified to AEC-Q101 standards for high reliability
Applications
Motor Drive & Control, Power Management, Defence, Military & Aerospace
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
13.5ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
300mW
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
210mA
On Resistance Rds(on)
13.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
370mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for 2N7002-7-F
7 Products Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate