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BSS8402DW-7-F
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 115 mA, 115 mA, 13.5 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.721 |
| 10+ | $0.459 |
| 25+ | $0.406 |
| 50+ | $0.354 |
| 100+ | $0.301 |
| 250+ | $0.269 |
| 500+ | $0.237 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.60
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS8402DW-7-F
Newark Part No.25R4433
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id800mA
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel50V
Drain Source Voltage Vds60V
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id P Channel130mA
Drain Source On State Resistance N Channel7.5ohm
Drain Source On State Resistance P Channel10ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel200mW
Power Dissipation P Channel200mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BSS8402DW-7-F is a complementary pair Enhancement Mode MOSFET with matte tin finish annealed over Alloy 42 lead frame terminals and UL94V-0 flame-rated moulded plastic case. Designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low on resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Level-1 per J-STD-020 moisture sensitivity
- Green product
- AEC-Q101 Qualified
Applications
Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id P Channel
130mA
Drain Source On State Resistance P Channel
10ohm
No. of Pins
6Pins
Power Dissipation P Channel
200mW
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
800mA
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id N Channel
115mA
Drain Source On State Resistance N Channel
7.5ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate