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DMG1012T-7
Power MOSFET, N Channel, 20 V, 630 mA, 400 mohm, SOT-523, Surface Mount
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG1012T-7
Newark Part No.82Y6555
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id630mA
Drain Source On State Resistance400mohm
On Resistance Rds(on)0.3ohm
Transistor Case StyleSOT-523
Transistor MountingSurface Mount
Power Dissipation Pd280mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation280mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
MSL-
Product Overview
DMG1012T-7 is a N-channel enhancement mode MOSFET.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, ESD protected up to 2kV
- Drain-source voltage is 20V at TA = +25°C
- Gate-source voltage is ±6V at TA = +25°C
- Continuous drain current is 0.63A at TA = +25°C, steady state
- Pulsed drain current is 3A at TA = +25°C
- Total power dissipation is 0.28W at TA = +25°C
- SOT523 package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source On State Resistance
400mohm
Transistor Case Style
SOT-523
Power Dissipation Pd
280mW
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Continuous Drain Current Id
630mA
On Resistance Rds(on)
0.3ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
280mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate