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DMG1016VQ-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 870 mA, 640 mA, 0.4 ohm
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 5 week(s)
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG1016VQ-7
Newark Part No.39AH6590
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id870mA
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel870mA
Continuous Drain Current Id P Channel640mA
Drain Source On State Resistance N Channel0.4ohm
Drain Source On State Resistance P Channel0.7ohm
Transistor Case StyleSOT-563
No. of Pins6Pins
Power Dissipation N Channel530mW
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
870mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
640mA
Drain Source On State Resistance P Channel
0.7ohm
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
870mA
Drain Source On State Resistance N Channel
0.4ohm
Transistor Case Style
SOT-563
Power Dissipation N Channel
530mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate