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VN10LP
Power MOSFET, N Channel, 60 V, 270 mA, 5 ohm, TO-226AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.670 |
| 10+ | $0.624 |
| 100+ | $0.569 |
| 500+ | $0.543 |
| 1000+ | $0.522 |
| 2500+ | $0.503 |
| 12000+ | $0.498 |
Price for:Each
Minimum: 1
Multiple: 1
$0.67
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoVN10LP
Newark Part No.98K2375
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id270mA
Drain Source On State Resistance5ohm
On Resistance Rds(on)7.5ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd625mW
Gate Source Threshold Voltage Max2.5V
Power Dissipation625mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The VN10LP is a N-channel enhancement mode Vertical DMOS FET with matte tin-plated terminals and level-1 per J-STD-020 moisture sensitivity.
- AEC-Q101 Qualified
- UL94V-0 Flammability rating
- Green product
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
270mA
On Resistance Rds(on)
7.5ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
625mW
Power Dissipation
625mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for VN10LP
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate