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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXT13N50DE6
Newark Part No.98K4165
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max50V
Collector Emitter Voltage V(br)ceo50V
Continuous Collector Current4A
Power Dissipation1.1W
Power Dissipation Pd1.1W
DC Collector Current4A
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
No. of Pins6Pins
Transition Frequency115MHz
DC Current Gain hFE Min450hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The ZXT13N50DE6 is a SuperSOT4™ NPN silicon low saturation switching Bipolar Transistor. It is a 4th generation ultra-low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency and low voltage switching applications.
- Extremely low equivalent ON-resistance
- Extremely low saturation voltage
- hFE characterised up to 10A
- -55 to 150°C Operating temperature range
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation
1.1W
DC Collector Current
4A
Transistor Mounting
Surface Mount
Transition Frequency
115MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max
50V
Continuous Collector Current
4A
Power Dissipation Pd
1.1W
Transistor Case Style
SOT-23
No. of Pins
6Pins
DC Current Gain hFE Min
450hFE
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability