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G2R1000MT17J
Silicon Carbide MOSFET, Single, N Channel, 5 A, 1.7 kV, 1.45 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerGENESIC
Manufacturer Part NoG2R1000MT17J
Newark Part No.89AH0973
Product RangeG2R Series
Technical Datasheet
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| 50+ | $4.170 |
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG2R1000MT17J
Newark Part No.89AH0973
Product RangeG2R Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id5A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance1.45ohm
On Resistance Rds(on)1ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage20V
Power Dissipation Pd54W
Gate Source Threshold Voltage Max5.5V
Power Dissipation44W
Operating Temperature Max175°C
Product RangeG2R Series
SVHCLead
Product Overview
G2R1000MT17J is a N-Channel enhancement mode silicon carbide MOSFET. Application includes auxiliary power supply, solar inverters (string and central), infrastructure chargers, industrial motors (AC Servos), general purpose inverters, pulsed power, piezo drivers, and Ion beam generators.
- G2R™ technology, softer R v/s temperature dependency, LoRing™ electromagnetically optimized design
- Smaller R and lower QG, low device capacitances, industry-leading UIL and short-circuit robustness
- Robust body diode with low V and low QRR, optimized package with separate driver source pin
- Compatible with commercial gate drivers, low conduction losses at all temperature
- Reduced rining, faster and more efficient switching, lesser switching spikes and lower losses
- Better power density and system efficiency, ease of paralleling without thermal runway
- Superior robustness and system reliability
- Drain-source voltage is 1700V (V = 0V, I = 100µA), power dissipation is 44W (TC=-25°C)
- 1000Mohm drain-source on-state resistance (typ, VGS=20V, ID=2A), 3A ID (TC = 100°C)
- 7pin TO-263-7 package, operating and storage temperature range from -55 to 175°C
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.7kV
On Resistance Rds(on)
1ohm
No. of Pins
7Pins
Power Dissipation Pd
54W
Power Dissipation
44W
Product Range
G2R Series
Channel Type
N Channel
Continuous Drain Current Id
5A
Drain Source On State Resistance
1.45ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
5.5V
Operating Temperature Max
175°C
SVHC
Lead
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability