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G3R20MT17K
Silicon Carbide MOSFET, Single, N Channel, 124 A, 1.7 kV, 0.02 ohm, TO-247
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ManufacturerGENESIC
Manufacturer Part NoG3R20MT17K
Newark Part No.89AH0982
Product RangeG3R Series
Technical Datasheet
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3R20MT17K
Newark Part No.89AH0982
Product RangeG3R Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id124A
Drain Source Voltage Vds1.7kV
Drain Source On State Resistance0.02ohm
On Resistance Rds(on)0.02ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage15V
Power Dissipation Pd809W
Gate Source Threshold Voltage Max2.7V
Power Dissipation809W
Operating Temperature Max175°C
Product RangeG3R Series
SVHCLead
Product Overview
G3R20MT17K is a N-channel enhancement mode silicon carbide MOSFET. Applications includes EV fast charging, solar inverters, industrial motor drives, transportation, industrial power supply, smart grid and HVDC, induction heating and welding, pulsed power.
- Drain-source voltage is 1700V (V=0V, I=100µA, T=25°C), RDS(ON) is 20mohm typ (T=25°C, VGS=15V)
- G3R™ Technology with +15V gate drive, softer R v/s temperature dependency
- LoRing™ - electromagnetically optimized design, smaller R and lower Q
- Low device capacitances (C0ss, CRss ), superior cost-performance index
- Robust body diode with low V and low QRR, industry-leading UIL & short-circuit robustness
- Compatible with commercial gate drivers, low conduction losses at all temperatures
- Reduced ringing, faster, more efficient switching, continuous forward current is 67A (T=100°C)
- Lesser switching spikes and lower losses, better power density and system efficiency
- Ease of paralleling without thermal runaway, superior robustness and system reliability
- TO-247-4 package, operating temperature range from -55 to 175°C
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.7kV
On Resistance Rds(on)
0.02ohm
No. of Pins
4Pins
Power Dissipation Pd
809W
Power Dissipation
809W
Product Range
G3R Series
Channel Type
N Channel
Continuous Drain Current Id
124A
Drain Source On State Resistance
0.02ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Gate Source Threshold Voltage Max
2.7V
Operating Temperature Max
175°C
SVHC
Lead
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability