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G3R30MT12J
Silicon Carbide MOSFET, Single, N Channel, 96 A, 1.2 kV, 0.03 ohm, TO-263 (D2PAK)
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ManufacturerGENESIC
Manufacturer Part NoG3R30MT12J
Newark Part No.89AH0984
Product RangeG3R Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 9 week(s)
| Quantity | Price |
|---|---|
| 250+ | $19.500 |
Price for:Each
Minimum: 1000
Multiple: 1000
$19,500.00
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG3R30MT12J
Newark Part No.89AH0984
Product RangeG3R Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id96A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.03ohm
On Resistance Rds(on)0.03ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Power Dissipation Pd459W
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.69V
Power Dissipation459W
Operating Temperature Max175°C
Product RangeG3R Series
SVHCLead
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.03ohm
No. of Pins
7Pins
Rds(on) Test Voltage
15V
Power Dissipation
459W
Product Range
G3R Series
Transistor Polarity
N Channel
Continuous Drain Current Id
96A
Drain Source On State Resistance
0.03ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
459W
Gate Source Threshold Voltage Max
2.69V
Operating Temperature Max
175°C
SVHC
Lead
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate