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GA20SICP12-263
JFET Transistor, 1.2 kV, 20 A, TO-263, 3 Pin, 175 °C
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Available to Order
Manufacturer Standard Lead Time: 19 week(s)
Product Information
ManufacturerGENESIC
Manufacturer Part NoGA20SICP12-263
Newark Part No.08X5874
Technical Datasheet
Gate Source Breakdown Voltage Max1.2kV
Zero Gate Voltage Drain Current Max20A
Drain Source Voltage Vds1.2kV
Gate Source Cutoff Voltage Max-
Continuous Drain Current Id20A
Power Dissipation157W
Transistor Case StyleTO-263
Power Dissipation Pd157W
No. of Pins3 Pin
Operating Frequency Min-
Operating Frequency Max-
Operating Temperature Max175°C
Channel TypeN Channel
RF Transistor CaseTO-263 (D2PAK)
Transistor MountingSurface Mount
No. of Pins3Pins
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead
Technical Specifications
Gate Source Breakdown Voltage Max
1.2kV
Drain Source Voltage Vds
1.2kV
Continuous Drain Current Id
20A
Transistor Case Style
TO-263
No. of Pins
3 Pin
Operating Frequency Max
-
Channel Type
N Channel
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Zero Gate Voltage Drain Current Max
20A
Gate Source Cutoff Voltage Max
-
Power Dissipation
157W
Power Dissipation Pd
157W
Operating Frequency Min
-
Operating Temperature Max
175°C
RF Transistor Case
TO-263 (D2PAK)
No. of Pins
3Pins
Qualification
-
SVHC
Lead
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate