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BFP620H7764XTSA1
Bipolar - RF Transistor, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, 110 RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $0.584 |
| 10+ | $0.401 |
| 25+ | $0.383 |
| 50+ | $0.365 |
| 100+ | $0.347 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBFP620H7764XTSA1
Newark Part No.50Y1756
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo2.3V
Collector Emitter Voltage Max2.3V
Transition Frequency65GHz
Power Dissipation Pd185mW
Power Dissipation185mW
Continuous Collector Current80mA
DC Collector Current80mA
Transistor Case StyleSOT-343
DC Current Gain hFE110hFE
No. of Pins4Pins
RF Transistor CaseSOT-343
DC Current Gain hFE Min110hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
2.3V
Power Dissipation Pd
185mW
Continuous Collector Current
80mA
Transistor Case Style
SOT-343
No. of Pins
4Pins
DC Current Gain hFE Min
110hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Voltage V(br)ceo
2.3V
Transition Frequency
65GHz
Power Dissipation
185mW
DC Collector Current
80mA
DC Current Gain hFE
110hFE
RF Transistor Case
SOT-343
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability