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10+ | $1.940 |
25+ | $1.770 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC030N08NS5ATMA1
Newark Part No.12AC9442
Product RangeOptiMOS 5
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id100A
On Resistance Rds(on)0.0026ohm
Drain Source On State Resistance0.003ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation139W
Power Dissipation Pd139W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS 5
Qualification-
Product Overview
BSC030N08NS5ATMA1 is an OptiMOS™5 power transistor MOSFET.
- Optimized for high performance SMPS, 100% avalanche tested
- Superior hermal resistance, N-channel
- Qualified according to JEDEC for target applications
- Drain-source breakdown voltage is 80V min (VGS=0V, ID=1mA, Tj=25°C)
- Drain-source on-state resistance is 3mohm max (VGS=10V, ID=50A, Tj=25°C)
- Continuous drain current is 161A max (VGS=10V, TC=25°C)
- Output charge is 73nC typ (VDD=40V, VGS=0V, TC=25°C)
- Gate charge total is 61nC typ (VDD=40V, ID=50A, VGS=0 to 10V, TC=25°C)
- Power dissipation is 139W max (TC=25°C)
- PG-TDSON-8 package, operating temperature range from -55 to 150°C
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0026ohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation
139W
No. of Pins
8Pins
Product Range
OptiMOS 5
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.003ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
139W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate