Print Page
BSC150N03LDGATMA1
Power MOSFET, N Channel, 30 V, 20 A, 0.015 ohm, PG-TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC150N03LDGATMA1
Newark Part No.60R2516
Also Known AsBSC150N03LD G, SP000359362
Technical Datasheet
3,601 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $0.537 |
| 10+ | $0.440 |
| 100+ | $0.384 |
| 500+ | $0.367 |
Price for:Each
Minimum: 1
Multiple: 1
$0.54
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC150N03LDGATMA1
Newark Part No.60R2516
Also Known AsBSC150N03LD G, SP000359362
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
On Resistance Rds(on)0.0125ohm
Drain Source On State Resistance0.015ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Power Dissipation Pd26W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation26W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC150N03LD G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
- Easy to design in
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Dual N-channel, logic level
- Fast switching MOSFETs for SMPS
- Optimized technology for DC-to-DC converters
- Qualified according to JEDEC for target applications
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Superior thermal resistance
- 100% Avalanche tested
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
20A
Drain Source On State Resistance
0.015ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
26W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0125ohm
Transistor Case Style
PG-TDSON
Power Dissipation Pd
26W
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability