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ManufacturerINFINEON
Manufacturer Part NoBSS806NH6327XTSA1
Newark Part No.85X4157
Product RangeOptiMOS 2 Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.361 |
| 10+ | $0.206 |
| 25+ | $0.180 |
| 50+ | $0.152 |
| 100+ | $0.125 |
| 250+ | $0.119 |
| 500+ | $0.113 |
| 1000+ | $0.100 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSS806NH6327XTSA1
Newark Part No.85X4157
Product RangeOptiMOS 2 Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2.3A
On Resistance Rds(on)0.041ohm
Drain Source On State Resistance0.057ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd500mW
Rds(on) Test Voltage2.5V
Gate Source Threshold Voltage Max550mV
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeOptiMOS 2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSS806N H6327 is a N-channel OptiMOS™2 enhancement-mode Small Signal Transistor offers 1.8V rated ultra logic level.
- Halogen-free
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.041ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
550mV
No. of Pins
3Pins
Product Range
OptiMOS 2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
2.3A
Drain Source On State Resistance
0.057ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
2.5V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate