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BSZ086P03NS3EGATMA1
Power MOSFET, P Channel, 30 V, 40 A, 0.0065 ohm, TSDSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoBSZ086P03NS3EGATMA1
Newark Part No.50Y1832
Technical Datasheet
319 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.443 |
| 10+ | $0.443 |
| 25+ | $0.443 |
| 50+ | $0.407 |
| 100+ | $0.406 |
| 250+ | $0.406 |
| 500+ | $0.375 |
| 1000+ | $0.349 |
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Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ086P03NS3EGATMA1
Newark Part No.50Y1832
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id40A
On Resistance Rds(on)0.0065ohm
Drain Source On State Resistance0.0065ohm
Transistor Case StyleTSDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd69W
Power Dissipation2.1W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Optima's™ P3 power transistor suitable for battery management, load switching applications.
- Single P-channel
- Qualified according to JEDEC for target applications
- Specially suited for notebook applications (VGS=25V)
- ESD protected
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0065ohm
Transistor Case Style
TSDSON
Rds(on) Test Voltage
10V
Power Dissipation Pd
69W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
0.0065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate