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BSZ520N15NS3GATMA1
Power MOSFET, N Channel, 150 V, 21 A, 0.052 ohm, PG-TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ520N15NS3GATMA1
Newark Part No.47W3368
Also Known AsBSZ520N15NS3 G, SP000607022
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.640 |
| 10+ | $1.200 |
| 100+ | $0.886 |
| 500+ | $0.752 |
| 1000+ | $0.719 |
Price for:Each
Minimum: 1
Multiple: 1
$1.64
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ520N15NS3GATMA1
Newark Part No.47W3368
Also Known AsBSZ520N15NS3 G, SP000607022
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id21A
On Resistance Rds(on)0.042ohm
Drain Source On State Resistance0.052ohm
Transistor Case StylePG-TSDSON
Transistor MountingSurface Mount
Power Dissipation Pd57W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The BSZ520N15NS3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Optimized for DC-to-DC conversion
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.042ohm
Transistor Case Style
PG-TSDSON
Power Dissipation Pd
57W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
Drain Source On State Resistance
0.052ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate