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DF23MR12W1M1PB11BPSA1
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 25 A, 1.2 kV, 0.045 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoDF23MR12W1M1PB11BPSA1
Newark Part No.91AH7044
Product RangeEasyPACK CoolSiC Trench Series
Technical Datasheet
12 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $30.170 |
| 5+ | $30.170 |
| 10+ | $30.170 |
| 25+ | $30.170 |
| 50+ | $30.170 |
Price for:Each
Minimum: 1
Multiple: 1
$30.17
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Product Information
ManufacturerINFINEON
Manufacturer Part NoDF23MR12W1M1PB11BPSA1
Newark Part No.91AH7044
Product RangeEasyPACK CoolSiC Trench Series
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Transistor PolarityDual N Channel
Channel TypeDual N Channel
Continuous Drain Current Id25A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)0.045ohm
Drain Source On State Resistance0.045ohm
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max150°C
Product RangeEasyPACK CoolSiC Trench Series
SVHCNo SVHC (08-Jul-2021)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
0.045ohm
No. of Pins
-
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
-
Product Range
EasyPACK CoolSiC Trench Series
Transistor Polarity
Dual N Channel
Continuous Drain Current Id
25A
On Resistance Rds(on)
0.045ohm
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation Pd
-
Operating Temperature Max
150°C
SVHC
No SVHC (08-Jul-2021)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate