FM24C64B-GTR

FM24C64B-GTR is a 64-Kbit (8K × 8) serial (I²C) F-RAM. It is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The application includes a general-purpose motor drive - variating frequency and voltage, LED strips, and signage.

• 64Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
• High-endurance 100 trillion read/writes, 151-year data retention
• No Delay™ writes, advanced high-reliability ferroelectric process
• Up to 1MHz frequency, direct hardware replacement for serial (I²C) EEPROM
• Supports legacy timings for 100KHz and 400KHz
• Standby current is 4µA typ (SCL=SDA=VDD)
• Voltage operation range from 4.5V to 5.5V
• Output pin capacitance (SDA) is 8pF max (TA=25°C, f=1 MHz, VDD=VDD(typ))
• Thermal resistance (junction to ambient) is 147°C/W
• 8-pin SOIC package, industrial operating temperature range from -40 to +85°C