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IGT60R190D1ATMA1
Gallium Nitride (GaN) Transistor, 600 V, 12 A, 0.14 ohm, 3.2 nC, PG-HSOF-8-3, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGT60R190D1ATMA1
Newark Part No.78AK6124
Product RangeCoolGaN Series
No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoIGT60R190D1ATMA1
Newark Part No.78AK6124
Product RangeCoolGaN Series
Drain Source Voltage Vds600V
Continuous Drain Current Id12A
Drain Source On State Resistance0.14ohm
Typical Gate Charge3.2nC
Transistor Case StylePG-HSOF-8-3
Transistor MountingSurface Mount
No. of Pins8Pins
Product RangeCoolGaN Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.14ohm
Transistor Case Style
PG-HSOF-8-3
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
12A
Typical Gate Charge
3.2nC
Transistor Mounting
Surface Mount
Product Range
CoolGaN Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability