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IMBG120R140M1HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 18 A, 1.2 kV, 0.189 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG120R140M1HXTMA1
Newark Part No.92AH5311
Product RangeCoolSiC Trench Series
Technical Datasheet
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|---|---|
| 1+ | $2.380 |
| 10+ | $2.380 |
| 25+ | $2.380 |
| 50+ | $2.380 |
| 100+ | $2.380 |
| 250+ | $2.380 |
| 500+ | $2.380 |
| 1000+ | $2.380 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG120R140M1HXTMA1
Newark Part No.92AH5311
Product RangeCoolSiC Trench Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id18A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.189ohm
On Resistance Rds(on)0.14ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.7V
Power Dissipation Pd107W
Power Dissipation107W
Operating Temperature Max175°C
Product RangeCoolSiC Trench Series
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
IMBG120R140M1HXTMA1 is a CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology. Typical applications include drives, infrastructure – charger, energy generation solar string inverter and solar optimizer and industrial power supplies-industrial UPS.
- Very low switching losses
- Short circuit withstand time 3µs
- Fully controllable dV/dt
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- Package creepage and clearance distance <gt/> 6.1mm
- Sense pin for optimized switching performance
- Efficiency improvement, enabling higher frequency and increased power density
- Cooling effort reduction and reduction of system complexity and cost
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.14ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
5.7V
Power Dissipation
107W
Product Range
CoolSiC Trench Series
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
18A
Drain Source On State Resistance
0.189ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation Pd
107W
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate