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IPB042N10N3GATMA1
Power MOSFET, N Channel, 100 V, 100 A, 0.0042 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $1.840 |
| 10+ | $1.480 |
| 25+ | $1.380 |
| 50+ | $1.290 |
| 100+ | $1.200 |
| 250+ | $1.120 |
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Multiple: 1
$1.84
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB042N10N3GATMA1
Newark Part No.47Y8047
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id100A
On Resistance Rds(on)0.0036ohm
Drain Source On State Resistance0.0042ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.7V
Power Dissipation214W
Power Dissipation Pd214W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
100V Optima's™ 3 power-transistorIdeal for high frequency switching and synchronous rectification.
- N-channel, normal level
- Excellent gate charge xRDS(on) product (FOM)
- Very low on-resistance RDS(on)
- Excellent switching performance
- World’s lowest R DS(on)
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.0036ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
214W
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.0042ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.7V
Power Dissipation Pd
214W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate