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IPB60R099CPATMA1
Power MOSFET, N Channel, 650 V, 31 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB60R099CPATMA1
Newark Part No.33P7131
Also Known AsIPB60R099CP, SP000088490
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $6.010 |
| 10+ | $4.970 |
| 25+ | $4.650 |
| 50+ | $4.340 |
| 100+ | $4.030 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB60R099CPATMA1
Newark Part No.33P7131
Also Known AsIPB60R099CP, SP000088490
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id31A
On Resistance Rds(on)0.09ohm
Drain Source On State Resistance0.099ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd255W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation255W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IPB60R099CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching topologies for server and telecom.
- Low figure-of-merit(FOM) RON x Qg
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Ultra low RDS (ON)
- Very fast switching
- Internal Rg very low
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
Applications
Industrial, Power Management, Communications & Networking, Consumer Electronics, Alternative Energy
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.09ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
255W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
31A
Drain Source On State Resistance
0.099ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
255W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate