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IPD042P03L3GATMA1
Power MOSFET, P Channel, 30 V, 7 A, 0.0042 ohm, TO-252 (DPAK), Surface Mount
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD042P03L3GATMA1
Newark Part No.43AC3266
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7A
Drain Source On State Resistance0.0042ohm
On Resistance Rds(on)0.0035ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation Pd150W
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification StandardAEC-Q101
Product Overview
- OptiMOS™ 3 power-transistor
- Single P-channel (logic level)
- Enhancement mode
- Qualified according to JEDEC for target application
- 175°C operating temperature
- Applications: load switch, HS-switch
- Halogen-free according to IEC61249-2-21
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0042ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
150W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
7A
On Resistance Rds(on)
0.0035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate